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相关概念视频

Field Effect Transistor01:29

Field Effect Transistor

309
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
309
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

298
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
298

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相关实验视频

Updated: Jun 9, 2025

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
12:32

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

Published on: May 24, 2020

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实验建模框架用于识别2D FET中可靠性问题导致的缺陷.

Luca Panarella1,2, Stanislav Tyaginov2, Ben Kaczer2

  • 1KU Leuven, Celestijnenlaan 200D, Heverlee 3001, Belgium.

ACS applied materials & interfaces
|October 28, 2024
PubMed
概括

研究人员开发了一种自我一致的方法来识别2D场效应晶体管中的缺陷. 该技术将实验测量与技术计算机辅助设计 (TCAD) 模拟相结合,以分析电荷捕获并提高设备稳定性.

关键词:
两维材料是二维材料.电流-电压特征的歇斯底里.接口陷 接口陷氧化物陷是一种氧化物陷.基于物理学的建模.可靠性的可靠性

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In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices
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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

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相关实验视频

Last Updated: Jun 9, 2025

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
12:32

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

Published on: May 24, 2020

8.7K
In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices
09:26

In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

Published on: June 26, 2015

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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

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科学领域:

  • 半导体物理 半导体物理
  • 材料科学 材料科学 材料科学
  • 设备工程 设备工程

背景情况:

  • 集成的2D场效应晶体管 (FET) 对于下一代电子设备至关重要.
  • 这些设备的缺陷显著影响性能和稳定性.
  • 鉴别这些缺陷对于可靠的设备制造至关重要.

研究的目的:

  • 开发和验证一种自相一致的方法,用于识别和描述300毫米集成2DFET的缺陷.
  • 为了将缺陷能量水平与观察到的设备行为相关联,特别是hysteresis.
  • 确定导致性能降低的特定原子缺陷.

主要方法:

  • 使用转移特征的歇斯底里测量.
  • 使用计算机辅助设计 (TCAD) 技术对电荷载体捕获/发射进行基于物理的建模.
  • 综合实验数据与TCAD模拟用于缺陷能量分布提取.

主要成果:

  • 基于缺陷能量位置的成功特征的电荷捕获/脱落.
  • 在AlOx中间层中提取了一个高斯近似的缺陷带,中心在WS2导电带最低值以下的~0.1 eV.
  • 在短暂的TCA模拟中使用提取的缺陷参数复制实验性歇斯底里转移特征.

结论:

  • 确定了间隙和氧气空缺作为AlOx/HfO2门WS2设备中引起歇斯底里的主要缺陷.
  • 这些缺陷损害了设备的稳定性,因为它们可以通过通道载体访问.
  • 开发的方法广泛适用于各种2D通道/门堆组合.