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实验建模框架用于识别2D FET中可靠性问题导致的缺陷

Luca Panarella^1,2, Stanislav Tyaginov², Ben Kaczer²

¹KU Leuven, Celestijnenlaan 200D, Heverlee 3001, Belgium.

ACS applied materials & interfaces

|October 28, 2024

概括

研究人员开发了一种自我一致的方法来识别2D场效应晶体管中的缺陷. 该技术将实验测量与技术计算机辅助设计 (TCAD) 模拟相结合,以分析电荷捕获并提高设备稳定性.

科学领域:

半导体物理半导体物理
材料科学材料科学材料科学
设备工程设备工程

背景情况:

集成的2D场效应晶体管 (FET) 对于下一代电子设备至关重要.
这些设备的缺陷显著影响性能和稳定性.
鉴别这些缺陷对于可靠的设备制造至关重要.

研究的目的:

开发和验证一种自相一致的方法,用于识别和描述300毫米集成2DFET的缺陷.
为了将缺陷能量水平与观察到的设备行为相关联,特别是hysteresis.
确定导致性能降低的特定原子缺陷.

主要方法:

使用转移特征的歇斯底里测量.
使用计算机辅助设计 (TCAD) 技术对电荷载体捕获/发射进行基于物理的建模.
综合实验数据与TCAD模拟用于缺陷能量分布提取.

主要成果:

基于缺陷能量位置的成功特征的电荷捕获/脱落.
在AlOx中间层中提取了一个高斯近似的缺陷带,中心在WS2导电带最低值以下的~0.1 eV.
在短暂的TCA模拟中使用提取的缺陷参数复制实验性歇斯底里转移特征.

结论:

确定了间隙和氧气空缺作为AlOx/HfO2门WS2设备中引起歇斯底里的主要缺陷.
这些缺陷损害了设备的稳定性,因为它们可以通过通道载体访问.
开发的方法广泛适用于各种2D通道/门堆组合.

关键词:

两维材料是二维材料.电流-电压特征的歇斯底里.接口陷接口陷氧化物陷是一种氧化物陷.基于物理学的建模.可靠性的可靠性

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