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Updated: Jun 9, 2025

Experimental Methods for Trapping Ions Using Microfabricated Surface Ion Traps
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边界陷增强的Ga2O3 非挥发性光电子记忆

Yonghui Zhang1,2, Rui Zhu2,3, Wenxing Huo4

  • 1School of Physics and Optoelectronic Engineering, Shandong University of Technology, 255000 Zibo, Shandong P. R. China.

Nano letters
|October 30, 2024
PubMed
概括

这项研究引入了一种使用β-Ga2O3/SiO2/Si.的新型深紫外光电子记忆. 它通过利用漏洞捕获的缺陷来实现超过10年的数据保留,增强非易失性存储能力.

关键词:
边境陷 边境陷 边境陷氧化的氧化.不易挥发的记忆 无易挥发的记忆光电子记忆器是指光电子记忆器.二氧化是二氧化中的一种.

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相关概念视频

MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
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