基于AlScN的CMOS兼容的集成电光相变器
Valerie Yoshioka1, Jicheng Jin1, Haiqi Zhou1
1University of Pennsylvania, Philadelphia, PA 19104, USA.
Nanophotonics (Berlin, Germany)
|December 5, 2024
概括
甘化 (AlScN) 显示了可扩展的集成光子学和电光学调制的潜力. 在演示相位转移时,电光反应低于预期,需要进一步研究以优化.
科学领域:
- 综合光子学 综合光子学
- 材料科学 是一种材料科学.
- 电光学是一种电光学.
背景情况:
- 可扩展性挑战限制了集成光子设备的商业生产.
- 甘化 (AlScN) 是一种新兴材料,具有光子应用的潜力.
- 与AlN相比,AlScN提供CMOS兼容性和增强的二级光学非线性.
研究的目的:
- 调查AlScN中用于相位转移和调制的电光效应.
- 评估AlScN用于大规模集成光子调制器生产的可行性.
- 测量基于AlScN的相变器的电光性能.
主要方法:
- 基于AlScN的相变器的制造和表征.
- 使用TM0模式测量电光效应.
- 确定r33电光系数和V_L (半波电压长度乘积).
主要成果:
- 在Al0.80Sc0.20N.中展示了电光相位移.
- 获得了大约750Vcm的V_L.
- 观察到电光反应小于理论上预期的.
结论:
- AlScN表现出适合相位移的电光特性,但响应需要改进.
- 讨论了电光反应减少的潜在原因.
- 需要进一步的研究来优化AlScN以实现高效的集成光子调制器.
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