Jove
Visualize
联系我们
JoVE
x logofacebook logolinkedin logoyoutube logo
关于 JoVE
概览领导团队博客JoVE 帮助中心
作者
出版流程编辑委员会范围与政策同行评审常见问题投稿
图书馆员
用户评价订阅访问资源图书馆顾问委员会常见问题
研究
JoVE JournalMethods CollectionsJoVE Encyclopedia of Experiments存档
教育
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab Manual教师资源中心教师网站
使用条款与条件
隐私政策
政策

相关概念视频

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

288
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
288
LC Circuits01:21

LC Circuits

2.4K
An LC circuit consists of an inductor and a capacitor, either in series or parallel. Consider a charged capacitor connected with an inductor in series. Before the switch is closed, all the energy of the circuit is stored in the electric field of the capacitor. When the switch is closed, the capacitor begins to discharge, producing a current in the circuit. The current, in turn, creates a magnetic field in the inductor. Because of the induced emf in the inductor, the current cannot change...
2.4K
MOSFET Amplifiers01:17

MOSFET Amplifiers

146
The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
146
Schottky Barrier Diode01:27

Schottky Barrier Diode

296
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
296
MOSFET01:16

MOSFET

422
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
422

您也可能阅读

相关文章

通过共同作者、期刊和引用图与本文相关的文章。

排序
Same author

Plasmodium yoelii infection induces lung injury by modulating type 2 conventional dendritic cells autophagy via the STAT3-IRF4 signaling.

Cell death & disease·2026
Same author

Corrigendum to Spread of MCR-3 colistin resistance in China: an epidemiological, genomic and mechanistic study 2018 Aug; 34: 139-157.

EBioMedicine·2026
Same author

Unravelling butyrate metabolism in sepsis: identification of key genes.

BMC infectious diseases·2025
Same author

Primary cilia integrity governs TRPV4-mediated NF-κB/COL2 signaling in osteoarthritis pathogenesis.

Cellular signalling·2025
Same author

Mechanism by which mechanical stimulation regulates chondrocyte apoptosis and matrix metabolism via primary cilia to delay osteoarthritis progression.

Zhong nan da xue xue bao. Yi xue ban = Journal of Central South University. Medical sciences·2025
Same author

Towards Floquet Chern insulators of light.

Nature nanotechnology·2025
Same journal

Recent Progress in on-Demand Transfer-Enabled Integration of Wavelength-Scale Light Sources.

Nanophotonics (Berlin, Germany)·2026
Same journal

Tunable skyrmion bag textures in surface phonon polariton lattices.

Nanophotonics (Berlin, Germany)·2026
Same journal

All-Optical Diffractive Operators for Rapid, Computer-Free Morphological Transformations.

Nanophotonics (Berlin, Germany)·2026
Same journal

Tunable Skyrmion, Meron, and Skyrmion Bag Textures in Surface Phonon Polariton Lattices.

Nanophotonics (Berlin, Germany)·2026
Same journal

Deep-Subwavelength Slot-Enhanced Broadband Dynamic Camouflage Metasurface Across the S, C, X, and Ku Bands.

Nanophotonics (Berlin, Germany)·2026
Same journal

Machine Learning-Driven Cooling Window Design Beyond Hyperbolic Metamaterials.

Nanophotonics (Berlin, Germany)·2026
查看所有相关文章

相关实验视频

Updated: Jun 5, 2025

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station
05:57

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station

Published on: April 1, 2020

8.0K

基于AlScN的CMOS兼容的集成电光相变器.

Valerie Yoshioka1, Jicheng Jin1, Haiqi Zhou1

  • 1University of Pennsylvania, Philadelphia, PA 19104, USA.

Nanophotonics (Berlin, Germany)
|December 5, 2024
PubMed
概括
此摘要是机器生成的。

甘化 (AlScN) 显示了可扩展的集成光子学和电光学调制的潜力. 在演示相位转移时,电光反应低于预期,需要进一步研究以优化.

关键词:
电光相位变速器 电光相位变速器综合光子学 综合光子学光子材料是一种光子材料.

更多相关视频

An Electrochemical Cholesteric Liquid Crystalline Device for Quick and Low-Voltage Color Modulation
10:33

An Electrochemical Cholesteric Liquid Crystalline Device for Quick and Low-Voltage Color Modulation

Published on: February 27, 2019

8.4K
Shaping the Amplitude and Phase of Laser Beams by Using a Phase-only Spatial Light Modulator
08:39

Shaping the Amplitude and Phase of Laser Beams by Using a Phase-only Spatial Light Modulator

Published on: January 28, 2019

9.7K

相关实验视频

Last Updated: Jun 5, 2025

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station
05:57

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station

Published on: April 1, 2020

8.0K
An Electrochemical Cholesteric Liquid Crystalline Device for Quick and Low-Voltage Color Modulation
10:33

An Electrochemical Cholesteric Liquid Crystalline Device for Quick and Low-Voltage Color Modulation

Published on: February 27, 2019

8.4K
Shaping the Amplitude and Phase of Laser Beams by Using a Phase-only Spatial Light Modulator
08:39

Shaping the Amplitude and Phase of Laser Beams by Using a Phase-only Spatial Light Modulator

Published on: January 28, 2019

9.7K

科学领域:

  • 综合光子学 综合光子学
  • 材料科学 是一种材料科学.
  • 电光学是一种电光学.

背景情况:

  • 可扩展性挑战限制了集成光子设备的商业生产.
  • 甘化 (AlScN) 是一种新兴材料,具有光子应用的潜力.
  • 与AlN相比,AlScN提供CMOS兼容性和增强的二级光学非线性.

研究的目的:

  • 调查AlScN中用于相位转移和调制的电光效应.
  • 评估AlScN用于大规模集成光子调制器生产的可行性.
  • 测量基于AlScN的相变器的电光性能.

主要方法:

  • 基于AlScN的相变器的制造和表征.
  • 使用TM0模式测量电光效应.
  • 确定r33电光系数和V_L (半波电压长度乘积).

主要成果:

  • 在Al0.80Sc0.20N.中展示了电光相位移.
  • 获得了大约750Vcm的V_L.
  • 观察到电光反应小于理论上预期的.

结论:

  • AlScN表现出适合相位移的电光特性,但响应需要改进.
  • 讨论了电光反应减少的潜在原因.
  • 需要进一步的研究来优化AlScN以实现高效的集成光子调制器.