相关实验视频
Updated: Jun 4, 2025

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Fabrication and Characterization of Superconducting Resonators
Published on: May 21, 2016
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在共振电路中的IGBT超流能力.
Basil Mohammed Al-Hadithi1,2, Miguel Jimenez3
1Intelligent Control Group, Centre for Automation and Robotics, Universidad Politécnica de Madrid, UPM-CSIC, C/J. Gutierrez Abascal, 28006 Madrid, Spain.
Sensors (Basel, Switzerland)
|December 17, 2024
概括
使用隔热门双极晶体管 (IGBT) 的共振电路可以安全地处理比其峰值评级高出170%的电流. 这使得成本效益高的功率电子设计能够实现接近零的开关损失.
科学领域:
- 电力电子 电力电子 电力电子
- 电气工程 电气工程
- 半导体设备 半导体设备
背景情况:
- 绝缘门双极晶体管 (IGBT) 和金属氧化物半导体场效应晶体管 (MOSFET) 在现代功率电子中至关重要.
- 这些晶体管的正确控制和激活对于防止电动汽车和光伏等应用中的损坏至关重要.
研究的目的:
- 调查在共振系统中超出最大允许晶体管电流的可行性.
- 展示设计具有成本效益和效率的共振电源电路的方法.
主要方法:
- 建造了一台双共振变压器,以产生非常高的电流.
- 一个充满共振IGBT晶体管的桥梁被用来切换这些高电流.
- 实施了一个控制系统,来自两个电流传感器的反.
主要成果:
- 该系统成功地证明了其能够超过最大允许的晶体管电流.
- 电流比晶体管的峰值电流高170%,可以无问题处理.
- 确认了在共振系统中运行IGBT超出其名义峰值电流的可行性.
结论:
- 响应电路可以设计为在电流显著超过其额定峰值电流时运行IGBT.
- 这种方法可以使用更低成本的晶体管,从而降低整体电路成本.
- 切换损失可以最小化,接近零,导致高效的电力电子系统.
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