Jove
Visualize
联系我们
JoVE
x logofacebook logolinkedin logoyoutube logo
关于 JoVE
概览领导团队博客JoVE 帮助中心
作者
出版流程编辑委员会范围与政策同行评审常见问题投稿
图书馆员
用户评价订阅访问资源图书馆顾问委员会常见问题
研究
JoVE JournalMethods CollectionsJoVE Encyclopedia of Experiments存档
教育
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab Manual教师资源中心教师网站
使用条款与条件
隐私政策
政策

相关概念视频

Colors and Magnetism03:02

Colors and Magnetism

11.5K
Color in Coordination Complexes
When atoms or molecules absorb light at the proper frequency, their electrons are excited to higher-energy orbitals. For many main group atoms and molecules, the absorbed photons are in the ultraviolet range of the electromagnetic spectrum, which cannot be detected by the human eye. For coordination compounds, the energy difference between the d orbitals often allows photons in the visible range to be absorbed and emitted, which is seen as colors by the human...
11.5K
Schottky Barrier Diode01:27

Schottky Barrier Diode

293
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
293
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

292
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
292
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

212
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
212

您也可能阅读

相关文章

通过共同作者、期刊和引用图与本文相关的文章。

排序
Same author

Time-Sequence Multifunctional Optoelectronic Synapse Enabled by a PtSe<sub>2</sub>/α-In<sub>2</sub>Se<sub>3</sub>/MoS<sub>2</sub> Ferroelectric Heterojunction.

ACS applied materials & interfaces·2026
Same author

Lightweight Insulating Sandwich-Structured Composite Film for Superior Antireflective EMI Shielding and Infrared Camouflage.

ACS applied materials & interfaces·2026
Same author

Giant unusual anisotropic magnetoresistance enabled by hole-electron resonance in van der Waals heterostructures.

Nature communications·2026
Same author

Ferroelectric Control of Spintronic and Valleytronic Properties in GdIBr/In<sub>2</sub>Se<sub>3</sub> van der Waals Multiferroic Heterostructures.

ACS applied materials & interfaces·2025
Same author

Surface nanostructures regulated by chalcogen bonding interactions.

Nanoscale horizons·2025
Same author

Unusual Van der Waals Magnetoresistance in Stacked Ferromagnetic Fe<sub>3</sub>GeTe<sub>2</sub>: The Role of Atomically Sharp Interfaces.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)·2025

相关实验视频

Updated: Jun 4, 2025

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

14.5K

半导体过渡金属二甲基化物是否适合用于自旋?

Bin Lu1,2, Yue Niu1, Qian Chen1

  • 1Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing 211189, China.

Nano letters
|December 17, 2024
PubMed
概括

这项研究发现,与之前的报道相反,半导体过渡金属二甲基化物 (TMD) 不适合用于自旋. 实验表明,在CoFeB/MoSe2接口上没有显著的自旋效应,这表明先前的研究中存在外部因素.

关键词:
铁磁共振是一种铁磁共振.接口 接口 接口 接口 接口分子光束的表达式是epitaxy.旋转抽动 旋转抽动过渡金属二甲基二甲基化物

更多相关视频

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

12.3K
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.4K

相关实验视频

Last Updated: Jun 4, 2025

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

14.5K
Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

12.3K
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.4K

科学领域:

  • 凝聚物质物理学 凝聚物质物理学
  • 材料科学 材料科学 材料科学
  • 这就是Spintronics.

背景情况:

  • 旋转是一种在铁磁材料接口上产生旋转电流的现象.
  • 在铁磁金属/过渡金属二甲基化物 (TMD) 接口中增强的吉尔伯特阻尼被归因于自旋.
  • 在这些接口中,自旋与外部因素的确切贡献仍在争论中.

研究的目的:

  • 在铁磁金属 (CoFeB) 和分层过渡金属二甲基 (MoSe2) 之间的原子清洁接口上调查自旋的存在和大小.
  • 为了澄清在类似系统中观察到的缓冲增强是由于内在的自旋或外在的实验工件.

主要方法:

  • 制造一个原子干净的CoFeB/MoSe2接口,使用全在位的分子束表生长策略.
  • 使用铁磁共振 (FMR) 分析来测量磁力学和提取吉尔伯特阻尼参数.
  • 在CoFeB/MoSe2和控制CoFeB/SiO2接口之间对缓冲参数进行比较.

主要成果:

  • 发现,CoFeB/MoSe2接口的吉尔伯特阻尼参数与CoFeB/SiO2控制接口的参数相似.
  • 这种相似性表明,在CoFeB/MoSe2接口上没有显著的自旋效应.
  • 对于其他代表性接口也观察到类似的结果,加强了主要发现.

结论:

  • 半导体过渡金属二甲基化物 (TMD) 不适合高效的自旋.
  • 在先前对铁磁金属/TMD接口的研究中观察到的缓冲增强可能主要是由外部贡献所主导的.
  • 这项工作提供了关键的澄清,关于背后的缩在自旋式异构结构的机制.