使用重惰性扩散添加剂进行超合规原子层沉积
Arun Haridas Choolakkal1, Pamburayi Mpofu1, Pentti Niiranen1
1Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping, Sweden.
The journal of physical chemistry letters
|February 26, 2025
概括
我们开发了一种超合规的原子层沉积 (ALD) 方法,使用一种沉重的惰性气体,克里普顿 (Kr),以改善纳米尺度特征的薄膜沉积. 这种新的方法提高了步骤覆盖率,这对于先进的半导体制造至关重要.
科学领域:
- 材料科学 材料科学 材料科学
- 纳米技术 纳米技术
- 化学工程是化学工程的重要组成部分.
背景情况:
- 缩小器件节点需要先进的沉积技术来填充纳米尺度的特征.
- 原子层沉积 (ALD) 提供了精度,但缺乏某些应用所需的超规格V形沉积.
- 目前的ALD方法在符合高比例结构的填充方面扎.
研究的目的:
- 开发一种改进的原子层沉积 (ALD) 工艺,以实现超合规薄膜沉积.
- 调查使用重惰性气体作为扩散添加剂来增强ALD的步骤覆盖.
- 为了证明这种策略在填充高比例纳米尺度特征方面的有效性.
主要方法:
- 实施了经过修改的原子层沉积 (ALD) 工艺,将 (Kr) 作为扩散添加剂.
- 使用化 (AlN) 从三甲 (Al(CH3) 3) 和氨 (NH3) 沉积作为模型系统.
- 在 Kr. 添加之前和之后,分析了18:1比例的步骤覆盖范围.
主要成果:
- 实现了超合规沉积,在18:1的面积比特征中,步骤覆盖率从1增加到1.6.
- 观察到较轻的前体分子 (NH3) 的增强扩散,由较重的Kr.气体促进.
- 由于有针对性的扩散,在特征开口的每周期生长率有所减少.
结论:
- 添加像Kr这样的沉重惰性气体可以实现超符合性原子层沉积 (ALD).
- 这种方法显著提高了高比例纳米结构的步骤覆盖率.
- 拟议的战略对半导体制造中的各种ALD工艺具有广泛的适用性.
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