Jove
Visualize
联系我们
JoVE
x logofacebook logolinkedin logoyoutube logo
关于 JoVE
概览领导团队博客JoVE 帮助中心
作者
出版流程编辑委员会范围与政策同行评审常见问题投稿
图书馆员
用户评价订阅访问资源图书馆顾问委员会常见问题
研究
JoVE JournalMethods CollectionsJoVE Encyclopedia of Experiments存档
教育
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab Manual教师资源中心教师网站
使用条款与条件
隐私政策
政策

相关概念视频

MOS Capacitor01:25

MOS Capacitor

631
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
631
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

248
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
248
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

178
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
178
MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

286
Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
286
MOSFET01:16

MOSFET

390
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
390
Schottky Barrier Diode01:27

Schottky Barrier Diode

251
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
251

您也可能阅读

相关文章

通过共同作者、期刊和引用图与本文相关的文章。

排序
Same author

High/low temperature setups for submillimetric samples under various extreme conditions at the AILES beamline.

Journal of synchrotron radiation·2026
Same author

Nanoscale Ripples at the Surface of SrTiO<sub>3</sub> Irradiated by a Broad Low-Energy Ar<sup>+</sup> (7 keV) Ion Beam.

Small (Weinheim an der Bergstrasse, Germany)·2026
Same author

Selective Gas Response of MXene Surface Functional Groups Revealed by Gas-Phase Transmission Electron Microscopy.

ACS nano·2026
Same author

Tuning Strain by Varying CaTiO<sub>3</sub> Thickness in Heteroepitaxially Grown La<sub>2/3</sub>Sr<sub>1/3</sub>MnO<sub>3</sub> Double-Clamped Resonators on Silicon.

ACS applied materials & interfaces·2026
Same author

Electronic-Structural Phase Correlations in Oxygen-Deficient Hafnia Nanocrystals.

Small (Weinheim an der Bergstrasse, Germany)·2025
Same author

Inverted shear-strain magnetoelastic coupling at the Fe/BaTiO<sub>3</sub> interface from polarised x-ray imaging.

Nature communications·2025

相关实验视频

Updated: May 15, 2025

Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model
11:10

Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model

Published on: May 23, 2018

11.8K

低歇斯底里二氧化瓦纳集成到上,使用互补的金属氧化物半导体兼容氧化物缓冲层.

Swayam Prakash Sahoo1,2,3, Matthieu Bugnet4, Ingrid Cañero Infante5

  • 1Ecole Centrale Lyon INSA Lyon Université Claude Bernard Lyon 1 CNRS Institut des Nanotechnologies de Lyon (INL) UMR 5270 69130 Ecully France.

Small science
|April 11, 2025
PubMed
概括

使用氧化 (HZO) 缓冲层在上集成的二氧化 (VO2) 薄膜显示出明显减少的金属绝缘体过渡歇斯底里. 这种HZO缓冲器使微电子的VO2设备可靠运行.

关键词:
M1M2 结构阶段过渡的过渡阶段莫特-皮尔尔斯的过渡时期二氧化瓦纳二氧化是什么金属绝缘器相位过渡的变化受到压力影响的歇斯底里症.

更多相关视频

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.0K
Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

2.1K

相关实验视频

Last Updated: May 15, 2025

Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model
11:10

Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model

Published on: May 23, 2018

11.8K
In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.0K
Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

2.1K

科学领域:

  • 材料科学 材料科学 材料科学
  • 凝聚物质物理学 凝聚物质物理学
  • 纳米技术 纳米技术

背景情况:

  • 二氧化瓦纳 (VO2) 在70°C左右呈现金属绝缘体过渡 (MIT),导致电气和光学性能发生显著变化.
  • VO2对光学,热学和神经形态应用具有前景,但由于晶格不匹配和界面酸盐形成,将其集成到上具有挑战性.
  • VO2中的多态和稳定的V-O相进一步使其融入微电子设备变得复杂.

研究的目的:

  • 通过使用配套的金属氧化物半导体兼容的氧化 (HZO) 缓冲层,研究在上集成的VO2薄膜的MIT.
  • 解决集成过程中晶格不匹配,酸盐形成和VO2多态化的挑战.
  • 了解应变对M2相核的影响及其对VO2的热歇斯底里的影响. MIT.

主要方法:

  • 在现场高分辨率X射线衍射 (HRXRD).
  • 同步子远红外光谱. 远红外光谱.
  • 多尺度原子和电子结构的表征.

主要成果:

  • 在HZO缓冲层上集成的VO2片显示出大约4°C的异常低的热歇斯底里.
  • 该研究揭示了应变对M2相核的影响,这对于控制歇斯底里斯宽度至关重要.
  • 在加热和冷却周期中,相位过渡速率被发现是对称的,这表明缺陷合并最小.

结论:

  • HZO缓冲层有效地减轻了VO2和之间的集成问题.
  • 减少和对称的相变歇斯底里凸显了基于VO2的可靠和强大的设备的潜力.
  • 这种集成策略为先进的微电子应用铺平了道路,利用VO2独特的MIT特性.