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Passive Filters01:27

Passive Filters

615
Passive filters are utilized to shape the frequency spectrum of signals across a diverse array of applications. These filters, using only passive elements like resistors (R), inductors (L), and capacitors (C), are capable of selectively allowing or blocking certain frequency ranges without the need for external power sources.
Low-Pass Filters
Low-pass filters are designed to transmit signals with frequencies lower than the cutoff frequency, ωc, and attenuate those above it. The cutoff...
615
Design Example01:23

Design Example

375
The innovation of touch-tone telephony revolutionized the telecommunications industry by replacing the traditional rotary dial with a dual-tone multi-frequency (DTMF) signaling system. This system uses a matrix-style keypad with buttons arranged in four rows and three columns, creating 12 distinct signals each assigned to a pair of frequencies. Each button press results in a simultaneous generation of two sinusoidal tones – one from a low-frequency group (697 to 941 Hz) and one from a...
375
Active Filters01:25

Active Filters

937
Active filters are electronic circuits that use operational amplifiers (op-amps), resistors, and capacitors to filter out unwanted frequency components from a signal. A first-order low-pass active filter is designed to pass signals with a frequency lower than a certain cutoff frequency and attenuate frequencies higher than that cutoff frequency. The transfer function for a first-order low-pass active filter is:
937
Biasing of FET01:22

Biasing of FET

374
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
374
Switching of BJT01:22

Switching of BJT

506
Switching behavior in Bipolar Junction Transistors (BJTs) is a fundamental aspect utilized in various electronic circuits, particularly for digital logic applications like switches and amplifiers. In a typical switching circuit, a BJT alternates between cut-off and saturation modes, corresponding to the "off" and "on" states, respectively, thus behaving like an ideal switch.
Cut-off Mode ("Off" State): In this state, both the emitter-base and collector-base junctions are...
506
MOSFET Amplifiers01:17

MOSFET Amplifiers

226
The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
226

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相关实验视频

Updated: Sep 20, 2025

Design and Characterization Methodology for Efficient Wide Range Tunable MEMS Filters
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VOx-基于可重新配置过器的非易失性无线电频率开关.

Dabin Seo1, Dahyeon Kim2, Jiyeon Ryu1

  • 1Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, South Korea.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)
|May 28, 2025
PubMed
概括

带有金和银电极的氧化瓦纳记忆器显示为射频开关的高性能. 这些设备可以实现先进的,敏捷的通信系统,具有可调节的过器.

关键词:
5G/6G的通信方式非易失性存储器 (non-volatile memory) 是一种非易失性存储器.无线电频率开关是什么意思可重新配置的过器氧化瓦纳的氧化物

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相关实验视频

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科学领域:

  • 材料科学 材料科学 材料科学
  • 电气工程 电气工程
  • 纳米技术纳米技术

背景情况:

  • 氧化瓦纳 (VOx) 记忆器适用于非挥发性内存和射频 (RF) 开关.
  • 与晶圆级流程的集成和高频操作是关键优势.

研究的目的:

  • 为了展示使用金和银电极的高性能VOx记忆器.
  • 评估它们对先进射频开关和可重新配置过器的潜力.

主要方法:

  • 使用金 (Au) 和银 (Ag) 电极制造VOx记忆器.
  • 设备性能的表征,包括保留,耐久性和切换速度.
  • 将记忆电阻集成到射频开关和可重新配置的带通波器中.

主要成果:

  • 与以前的VOx设备相比,实现了更高的切断频率.
  • 经过证明的RF开关的切断频率为4.5 THz,低插入损失 (<0.46 dB),高隔离 (>20 dB) 高达67 GHz.
  • 开发了一种可重新配置的X频段带宽过器,可调节范围为600MHz.

结论:

  • 高性能VOx记忆器可用于下一代RF应用.
  • 这些设备可以实现紧和多功能射频前端,并增强频率敏捷性.
  • 展示的可重新配置过器展示了先进通信系统的潜力.