Jove
Visualize
联系我们
JoVE
x logofacebook logolinkedin logoyoutube logo
关于 JoVE
概览领导团队博客JoVE 帮助中心
作者
出版流程编辑委员会范围与政策同行评审常见问题投稿
图书馆员
用户评价订阅访问资源图书馆顾问委员会常见问题
研究
JoVE JournalMethods CollectionsJoVE Encyclopedia of Experiments存档
教育
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab Manual教师资源中心教师网站
使用条款与条件
隐私政策
政策

相关概念视频

MOS Capacitor01:25

MOS Capacitor

1.0K
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
1.0K
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

493
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
493

您也可能阅读

相关文章

通过共同作者、期刊和引用图与本文相关的文章。

排序
Same author

Ultra-sensitive mercury sensor based on thin film transistor using flavin self-assembly on monochiral carbon nanotubes.

Nanoscale·2026
Same author

Diffusion and Surface Effects on Sodium-Promoted MoS<sub>2</sub> Growth Observed in Operando.

Small methods·2025
Same author

Sorting of Carbon Nanotubes Based on Dispersant Binding Affinities.

Small science·2025
Same author

Excitonic Fano Scattering Behaviors of Carbon Nanotubes from Interference with Dispersant.

The journal of physical chemistry letters·2025
Same author

Highly Efficient Thermoelectricity Based on Self-Doped Carbon Nanotubes through the Repetitive Filtration Process.

ACS applied materials & interfaces·2025
Same author

Pressure-Dependent Shape and Edge Configurations of MoS<sub>2</sub> by Kinetic Monte Carlo Simulation.

ACS nano·2024
Same journal

Lasing characteristics and stress-tuning effects in GaN beam microcavities.

Nanoscale·2026
Same journal

Unraveling the synergy of core doping and the motif shell in atomically precise PtAg nanoclusters for CF<sub>3</sub>-ketone alkynylation.

Nanoscale·2026
Same journal

A dual-functional heavy-metal-free quantum dot/TiO<sub>2</sub> hybrid system for simultaneous pollutant degradation and green hydrogen production.

Nanoscale·2026
Same journal

Rational design of spherical NiCoB@rGO nanocomposites for efficient electrochemical energy storage.

Nanoscale·2026
Same journal

Ligand-controlled engineering of Cu-H active sites on Cu<sub>25</sub> hydride nanoclusters for efficient CO<sub>2</sub> electroreduction.

Nanoscale·2026
Same journal

Isostructural Co/Ni-containing banana-shaped polyoxometalates for visible-light-driven hydrogen production.

Nanoscale·2026
查看所有相关文章

相关实验视频

Updated: Sep 19, 2025

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
08:50

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

9.3K

层控制的连续MoS2增长使用可旋覆盖的金属前体缓冲器.

Dong Hwan Kim1, Jinyoung Seo2, Yoonbeen Kang2

  • 1Graduate Program of Semiconductor Science and Engineering, Yonsei University, Seoul 03722, Republic of Korea. syju@yonsei.ac.kr.

Nanoscale
|June 5, 2025
PubMed
概括
此摘要是机器生成的。

研究人员开发了一个pH优化的缓冲器,用于通过化学蒸气沉积 (CVD) 连续,大面积的二硫化物 (MoS2) 增长. 这种方法确保了统一的前体吸附和核化,用于可扩展的二维材料制造.

更多相关视频

Electrophoretic Crystallization of Ultrathin High-performance Metal-organic Framework Membranes
07:45

Electrophoretic Crystallization of Ultrathin High-performance Metal-organic Framework Membranes

Published on: August 16, 2018

10.1K
Solvothermal Synthesis of MIL-96 and UiO-66-NH2 on Atomic Layer Deposited Metal Oxide Coatings on Fiber Mats
06:00

Solvothermal Synthesis of MIL-96 and UiO-66-NH2 on Atomic Layer Deposited Metal Oxide Coatings on Fiber Mats

Published on: June 13, 2018

11.6K

相关实验视频

Last Updated: Sep 19, 2025

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
08:50

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

9.3K
Electrophoretic Crystallization of Ultrathin High-performance Metal-organic Framework Membranes
07:45

Electrophoretic Crystallization of Ultrathin High-performance Metal-organic Framework Membranes

Published on: August 16, 2018

10.1K
Solvothermal Synthesis of MIL-96 and UiO-66-NH2 on Atomic Layer Deposited Metal Oxide Coatings on Fiber Mats
06:00

Solvothermal Synthesis of MIL-96 and UiO-66-NH2 on Atomic Layer Deposited Metal Oxide Coatings on Fiber Mats

Published on: June 13, 2018

11.6K

科学领域:

  • 材料科学 材料科学 材料科学
  • 纳米技术纳米技术
  • 化学工程是化学工程的重要组成部分.

背景情况:

  • 连续的大面积二硫化物 (MoS2) 的增长对光电子非常重要.
  • 传统的化学蒸汽沉积 (CVD) 在前体吸附和均核化方面面临挑战.

研究的目的:

  • 开发一种高效且可重复的连续大面积MoS2增长的方法.
  • 为了克服2D材料制造传统CVD工艺的局限性.

主要方法:

  • 使用胆酸盐 (SC) 开发了一种pH优化的金属前体缓冲器.
  • 氧化被转化为稳定的氧化 (Na2MoO4) /SC复合物.
  • 在pH 5.3.3下实现了前体复合物对SiO2/Si基板的均旋转涂层.

主要成果:

  • 制造了连续的,厘米尺度的MoS2膜,并控制了层数.
  • 前体复合物促进了均吸附,并通过CVD控制了MoS2层的形成.
  • 在低至500°C的温度下观察到MoS2的增长,增长动力学是实时的特征.

结论:

  • 使用金属前体缓冲器开发的旋转涂层技术可以实现稳定,可扩展和可重复的大面积MoS2生长.
  • 这种方法为生产2D材料应用的过渡金属素化物结构提供了可靠的途径.
  • 这些发现推动了下一代光电子设备的发展.