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相关概念视频

Diode: Forward bias01:20

Diode: Forward bias

2.1K
In semiconductor devices, diodes play a crucial role in directing current flow, and its operation is primarily categorized into forward bias and reverse bias. A diode is said to be forward-biased when its p-type region is connected to the positive terminal of a battery and its n-type region is linked to the negative terminal. This configuration reduces the potential barrier within the diode, allowing current to flow easily from the p to the n-type region.
The behavior of a diode in forward bias...
2.1K
Diode: Reverse bias01:14

Diode: Reverse bias

1.8K
A diode is reverse-biased when the positive terminal of an external voltage source is connected to the n-type material and the negative terminal to the p-type material. This configuration opposes the natural direction of current flow through the diode, effectively increasing the width of the depletion region and the barrier potential. The reverse bias condition produces a minimal leakage current, primarily due to minority charge carriers. This leakage becomes significant when the reverse...
1.8K
MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

822
Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
822
Biasing of FET01:22

Biasing of FET

677
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
677
Fast Decoupled and DC Powerflow01:24

Fast Decoupled and DC Powerflow

726
The fast decoupled power flow method addresses contingencies in power system operations, such as generator outages or transmission line failures. This method provides quick power flow solutions, essential for real-time system adjustments. Fast decoupled power flow algorithms simplify the Jacobian matrix by neglecting certain elements, leading to two sets of decoupled equations:
726
Biasing of P-N Junction01:16

Biasing of P-N Junction

1.8K
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
1.8K

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相关实验视频

Updated: Jan 16, 2026

Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators
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Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators

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数字推拉驱动器电源拓结构用于非破坏性测试.

Haohuai Xiong1, Cheng Guo1, Qing Zhao1

  • 1School of Resources and Environment, University of Electronic Science and Technology of China, Chengdu 611731, China.

Sensors (Basel, Switzerland)
|September 27, 2025
PubMed
概括

这项研究介绍了一种新的数字控制的推拉驱动器电源. 新设计提高了双动力系统的稳定性和可靠性,克服了传统的复杂性.

科学领域:

  • 电气工程 电气工程
  • 电力电子 电力电子 电力电子
  • 控制系统 控制系统

背景情况:

  • 传统的推拉开关模式电源 (SMPS) 提供高效率,但需要复杂的辅助电路.
  • 双功率高压放大器系统因供应不平衡和负载波动而面临不稳定,有可能导致设备故障.

研究的目的:

  • 提出一种新的数字信号控制的推拉驱动器电源拓.
  • 解决传统设计的结构复杂性和可靠性问题.

主要方法:

  • 使用数字脉冲宽度调制 (PWM) 信号进行控制.
  • 实现了多级金属氧化物半导体场效应晶体管 (MOSFET) 与可调功率循环驱动器.
  • 集成的多通道电流传感和故障保护机制.

主要成果:

  • 在±220V,20kHz,180W原型的实验验证显示出出色的性能.
  • 数字控制拓在双面同步电源场景中显著提高了稳定性和可靠性.
  • 有效地解决了传统推拉设计的缺点.

结论:

  • 拟议的数字控制拓为推拉电源提供了简化和更可靠的解决方案.
关键词:
数字信号控制信号的数字控制信号.防故障保护 防故障保护高压电源供应的高压电源供应器多个阶段的MOSFET.非破坏性测试是指非破坏性测试.脉冲宽度调制 (PWM) 是一种推拉动拓学.

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In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices
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All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
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All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

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Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators
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Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators

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In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices
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In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

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All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
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  • 潜在的应用包括非破坏性测试和高压驱动系统.
  • 这一创新提高了要求高的双功率应用中的性能.