在无光纤多层散装RRAM中导电机制的建模
Yucheng Zhou1, Ashwani Kumar1, Jaeseoung Park1
1Department of Electrical and Computer Engineering, University of California at San Diego, San Diego, CA 92093 USA.
IEEE transactions on electron devices
|October 8, 2025
概括
无线丝散装电阻开关随机访问存储器 (RRAM) 为神经形态计算提供了改进的多层次状态. 这项研究模拟了大量RRAM中的传导机制,指导了未来设备的设计.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 计算机科学 计算机科学
背景情况:
- 无线丝散装电阻开关随机访问存储器 (RRAM) 显示出由于多层导电状态和无成形运行,对神经形态计算有希望.
- 优化RRAM设备特性和理解切换动态对于计算在内存和神经形态应用中的大规模集成至关重要.
研究的目的:
- 为了研究无光线散装RRAM设备的传导机制和切换动态.
- 开发一种用于三层堆中导电的定量物理模型.
- 以指导使用多层金属氧化物堆的批量切换RRAM设备的设计.
主要方法:
- 进行了温度依赖的电流-电压 (I-V) 测量,以分析开关特性.
- 开发了一个定量物理模型来描述三层堆的导电,考虑了多个导电机制的系列组合.
- 该模型与无线丝散装RRAM设备的实验数据相匹配.
主要成果:
- 该研究通过温度依赖的I-V测量成功分析了大量RRAM的切换特性.
- 提出了一种定量物理模型,描述了通过结合多种机制在三层堆中传导的情况.
- 该模型通过将其与实验数据相匹配来验证,揭示了三层堆中散装切换的起源.
结论:
- 开发的定量物理模型准确地描述了无线丝散装RRAM设备中的传导机制.
- 该模型是设计使用多层氧化金属堆的新型散装切换RRAM设备的宝贵指南.
- 这些发现有助于推进RRAM技术用于神经形态计算和记忆应用.
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