基于多态转换的非挥发性内存设备中的相控,用于X点结构中可靠的数据读取

Shunsuke Mori1, Shogo Hatayama2, Yuji Sutou1,3

  • 1Department of Materials Science, Graduate School of Engineering, Tohoku University, 6-6-11 Aoba-yama, Aoba-ku, Sendai, 980-8579, Japan. shunsuke.mori@edu.k.u-tokyo.ac.jp.

Nanoscale
|October 14, 2025
PubMed
概括

本研究探讨了用于相变记忆的 telluride (MnTe) 中的转移稳定的 wurtzite 类型 β' 阶段. 控制其电阻率和体积分数调整内存性能,对于先进的3D X 点架构至关重要.

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