基于多态转换的非挥发性内存设备中的相控,用于X点结构中可靠的数据读取
Shunsuke Mori1, Shogo Hatayama2, Yuji Sutou1,3
1Department of Materials Science, Graduate School of Engineering, Tohoku University, 6-6-11 Aoba-yama, Aoba-ku, Sendai, 980-8579, Japan. shunsuke.mori@edu.k.u-tokyo.ac.jp.
Nanoscale
|October 14, 2025
概括
本研究探讨了用于相变记忆的 telluride (MnTe) 中的转移稳定的 wurtzite 类型 β' 阶段. 控制其电阻率和体积分数调整内存性能,对于先进的3D X 点架构至关重要.
科学领域:
- 材料科学 材料科学 材料科学
- 固态物理 固态物理
- 纳米技术纳米技术
背景情况:
- 电化物 (MnTe) 显示了可逆相变的相变换,用于相变换记忆.
- 在MnTe中高度电阻的氏体类型β′相对于内存应用还没有得到充分的探索.
研究的目的:
- 研究β′相电阻 (ρβ′) 和体积分数 (fβ′) 对MnTe内存性能的影响.
- 根据β′到α相转换,评估MnTe记忆细胞的值特征.
主要方法:
- 根据透模型,制造出具有可变电阻对比度 (ΔR) 的内存细胞.
- 分析电流-电压 (I-V) 曲线以确定值电压 (Vth).
主要成果:
- 一个透模型表明 ρβ′ ≈ 500 Ω cm.
- 门电压 (Vth) 随着 ΔR 的增加而增加.
- 通过控制fβ′和MnTe层厚度,系统调节值参数.
结论:
- 值参数的调整性对于基于MnTe的相变存储器至关重要.
- 结果为设计与3D X 点架构兼容的多态转换内存提供了洞察力.
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