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Updated: Jan 14, 2026

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Published on: November 24, 2016

高含量的AlScN伪基质在InGaN合金Epitaxy中的高含量.

Jörg Schörmann¹, Mario F Zscherp¹, Silas A Jentsch¹

¹Institute of Experimental Physics I and Center for Materials Research, Justus-Liebig-University Giessen, Giessen D-35392, Germany.

ACS applied materials & interfaces

|October 23, 2025

概括

,,化 (AlScN) 伪基质可以改善合化 (InGaN) 增长的格子匹配. 这一突破使高质量的InGaN膜成为可能,为高效的红色微型发光二极管 (micro-LED) 设备铺平了道路.

关键词:

在这里,我们可以看到AlScNN 在GaNN中获得.格子匹配的模板与格子匹配的模板.分子束表 (MBE) 是一种分子束表.红光发射二极管是红光发射二极管.

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Epitaxial Growth of Perovskite Strontium Titanate on Germanium via Atomic Layer Deposition

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相关实验视频

Last Updated: Jan 14, 2026

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Published on: November 24, 2016

Synthesis of In37P20O2CR51 Clusters and Their Conversion to InP Quantum Dots

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Published on: May 7, 2019

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Published on: July 26, 2016

科学领域:

材料科学材料科学材料科学
半导体物理半导体物理
光电学是指光电子产品.

背景情况:

化物半导体对紫外线至绿色光电非常重要.
化 (InGaN) 与化 (GaN) 之间的格子不匹配阻碍了发射红色的微型发光二极管 (micro-LED) 的开发.
现有的基板会导致InGaN.N的缺陷和组成不均.

研究的目的:

调查,,化 (AlScN) 伪基质作为InGaN生长的替代品.
为了克服生产红色发射的InGaN设备中的格子不匹配挑战.
提高用于光电子应用的InGaN薄膜的质量和统一性.

主要方法:

使用等离子体辅助的分子束表达素 (epitaxy) 增长相纯AlScN层 (0.1
在AlScN伪基板上沉积InGaN薄膜.
通过光发光学来表征薄膜质量,成分和光学特性.

主要成果:

AlScN伪基质为InGaN提供了改进的网格匹配.
实现了具有均分布的高质量InGaN薄膜.
在AlScN支的薄膜上观察到没有组合拉动效应.
室温光发光在538nm时显示了狭窄的辐射.

结论:

AlScN伪基质有效地减轻了InGaN表层中的晶格不匹配问题.
可以实现统一的InGaN薄膜,这对于高效的设备性能至关重要.
AlScN伪基板在开发集成红色微LED方面显示出显著的前景.