,

Gwangsik Jeon1, Sangmin Jeon1, Seunghwan Lee2

  • 1Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea.

概括

一种新的牺牲性原子层沉积 (s-ALD) 方法可以创建高度均的超薄反 (Sb) 薄膜. 这一突破对于推进纳米电子和相变内存设备至关重要.

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