使IGZO TFT使访.

Fuxi Liao1, Zhengyong Zhu2, Zihan Li1

  • 1State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China.

Nature communications
|December 8, 2025
PubMed
概括

一个新的3D动态随机访问内存架构使用垂直双门晶体管来实现更高的密度,克服AI部署的瓶. 这种单步堆叠过程提高了对齐和热稳定性,以实现高效的近内存计算.

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