使用垂直双门IGZO TFT使用动态随机访问内存的高密度三维集成.
Fuxi Liao1, Zhengyong Zhu2, Zihan Li1
1State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China.
Nature communications
|December 8, 2025
概括
一个新的3D动态随机访问内存架构使用垂直双门晶体管来实现更高的密度,克服AI部署的瓶. 这种单步堆叠过程提高了对齐和热稳定性,以实现高效的近内存计算.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 计算机科学 计算机科学
背景情况:
- 人工智能 (AI) 的部署面临着内存密度瓶.
- 目前的三维 (3D) 动态随机存储器 (DRAM) 集成挑战包括错位和热循环.
- 需要新的内存细胞架构来提高AI性能.
研究的目的:
- 展示一个3D DRAM架构,使人工智能能够实现更高的内存密度.
- 解决3D DRAM集成方面的挑战,特别是横向不对齐和热循环.
- 展示一个可扩展和可靠的内存解决方案,用于近内存计算.
主要方法:
- 开发了一个垂直双门两晶体管零电容器内存细胞架构.
- 采用单步过程,同时堆叠双门的In-Ga-Zn-O晶体管.
- 使用in-situ臭氧氧化,优化了接触金属化和接口.
- 在超级缩放的4F2 2T0C DRAM中演示了四位多位操作.
主要成果:
- 通过新的3D DRAM架构实现更高的内存密度.
- 克服了错位和热循环问题,使用单步堆叠过程.
- 垂直双门晶体管表现出高的状态电流,小的下值斜率,以及更好的热稳定性.
- 在超级缩放DRAM单元中证明了可靠的四位多位操作.
结论:
- 展示的3D DRAM架构为AI内存瓶提供了一个有希望的解决方案.
- 单步堆叠过程和优化的晶体管提高了可扩展性和可靠性.
- 这种方法为先进的人工智能系统提供了更高效的近内存计算.
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