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Updated: Mar 14, 2026

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
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通过喷射动力学进行垂直梯度的现场工程,用于高性能IGZO通道全方位晶体管的垂直梯度.

Jiabao Sun1, Wei Yu1, Jing Zhang1

  • 1Beijing Superstring Academy of Memory Technology, Beijing 100176, China.

Nano letters
|March 13, 2026
PubMed
概括

这项研究为垂直通道全方位 (VCAA) 晶体管引入了一种新的梯度通道,显著提高了性能. 工程道降低了接触阻力,并增强了高级3D集成电路的驱动电流.

关键词:
接触电阻的不对称性梯度频道的梯度频道是一个梯度频道.--氧化物 (IGZO) 是一种一个单一的3D集成.喷动力学 喷动力学垂直通道全方位 (VCAA) FETs 在周围

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Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
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