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Updated: Jan 22, 2026

Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators
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化半导体共振道晶体管晶体管

Fang Liu1, JunShuai Xue1, GuanLin Wu1

  • 1State Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology, School of Microelectronics, Xidian University, Xi'an, P. R. China.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)
|January 21, 2026
PubMed
概括

研究人员开发了用于先进电子的三端化 (GaN) 共振道晶体管 (RTT). 这些RTT克服了传统二极管的局限性,使可调节的负差电阻 (NDR) 和超越二进制逻辑的电流放大成为可能.

关键词:
高电子流动性晶体管高电子流动性晶体管单立体集成电子产品负差异电阻的负差异电阻化物半导体 半导体中的化物声道二极管的共振

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