概括
不同质地集成的III/V-on-silicon nitride模式锁定激光器克服了低输出功率的限制. 微传输打印为增强应用增加了10.5dB的激光输出功率.
科学领域:
- 光子学和光学工程 光子学和光学工程
- 材料科学与工程 材料科学与工程
- 半导体设备物理 半导体设备物理
背景情况:
- 集成模式锁定激光器对于电信和光谱等应用至关重要.
- 目前的集成激光设计存在低输出功率问题,这限制了它们的实际使用.
- 不同质的整合提供了一条克服这些局限性的途径.
研究的目的:
- 为了展示一种异质集成的III/V-on-silicon nitride模式锁定激光器,其输出功率得到了改进.
- 为了解决当前集成源的功率限制.
- 展示微转移印刷在先进光子集成中的潜力.
主要方法:
- 为了实现异质整合,采用了两步微转印方法.
- 集成了一个III/V半导体光学放大器和一个插座.
- 在锁定模式的激光输出端内置了一个增强器放大器.
主要成果:
- 实现了3GHz的重复频率模式锁定激光.
- 使用集成的助推放大器,放大输出功率高达10.5dB.
- 在芯片上达到11dBm的平均输出功率.
结论:
- 通过微传输打印的异质集成有效地提高了模式锁定激光器的输出功率.
- 展示的方法克服了集成光子源的关键限制.
- 这项技术为各种应用中更强大的集成激光器铺平了道路.
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