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Updated: Feb 22, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
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选择性室温气体传感在过渡金属合MoS中的第一原则设计规则2

Maciej J Szary1

  • 1Institute of Physics, Poznan University of Technology, ul. Piotrowo 3, 61-138 Poznan, Poland.

ACS applied materials & interfaces
|February 21, 2026
PubMed
概括

在二硫化 (MoS2) 中对过渡金属进行兴奋剂增强了气体传感器的选择性. 第7组兴奋剂显著提高二氧化 (NO2) 的检测,使得化学传感应用的ppb级敏感性.

关键词:
两维材料是二维材料.在 DFT 建模中.空气污染物的空气污染物.缺陷工程是什么?缺陷工程是什么?结构 - 活动关系.

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Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
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