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Updated: Mar 3, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
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侧门垂直OECT用于集成互补电路

Guohong Hu1, Sihui Hou1, Qijun Cai1

  • 1School of Automation Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu, China. whuang@uestc.edu.cn.

Materials horizons
|March 2, 2026
PubMed
概括

在侧门有机电化学晶体管 (OECT) 中优化门尺寸可以显著提高性能. 这项研究为高性能OECT和集成生物电子电路提供了设计策略.

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