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Ferromagnetism

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Updated: Mar 7, 2026

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

在固态NAND存储中实现辐射硬度,使用层状铁电堆.

Lance Fernandes¹, Stuart Wodzro¹, Prasanna Venkatesan¹

¹School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.

|March 5, 2026

概括

此摘要是机器生成的。

带有层状门堆的铁电场效应晶体管 (FeFET) 在垂直NAND技术中显示出显著的辐射弹性. 这些FeFET在苛刻的环境中提供了可靠的固态存储的有希望的解决方案.

关键词:

铁电 NAND 的使用.大大的内存窗口.可靠性的可靠性 γ 辐射的辐射

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科学领域:

材料科学材料科学材料科学
电气工程电气工程
半导体物理半导体物理

背景情况:

纳德闪存对人工智能至关重要,但容易受到辐射诱导的值电压 (Vth) 降解.
这种退化给太空和国防应用带来了可靠性挑战.

研究的目的:

在垂直NAND技术中研究铁电场效应晶体管 (FeFET) 的辐射抗性.
为了评估FeFETs与层状门堆作为辐射硬化存储解决方案.

主要方法:

使用Hf0.5Zr0.5O2/Al2O3/Hf0.5Zr0.5O2堆制造垂直NAND兼容的层叠聚通道FeFET.
在高达10Mrad的总电离剂量 (TID) 下测试FeFETs.
对值电压 (Vth) 转移和内存窗口保留的分析.
技术计算机辅助设计 (TCAD) 建模以了解陷行为.

主要成果:

层状FeFETs保持了一个完整的内存窗口和强大的切换到10 Mrad ((空气).
在经过1Mrad ((空气)) 后的编程和删除状态中观察到微不足道的TID诱导漂移.
删除状态在10 Mrad (空气) 时显示了大约2 V的降解,归因于状态依赖的陷.
与充电陷NAND相比,FeFETs显示每单位剂量的Vth降解大约为30倍.

结论:

与传统的充电陷NAND相比,层状FeFET提供了优越的辐射弹性.
带有层状门堆的FeFET是空间和国防应用中辐射硬化固态存储的有希望的候选者.