Dzyaloshinskii-Moriya 使 3D

Bo Li1,2, Kelian Lin1,2,3, Kun Zhang1,2

  • 1Fert Beijing Research Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, P. R. China.

概括

研究人员在渐变磁多层中开发了一种新型散装类介层DMI (BIL-DMI),使3D拓磁纹理具有远程垂直奇拉性. 这一突破为先进的磁电路铺平了道路.

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