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  2. Enhanced Damping-like Torque Through Strain Modulation In Ruo2.
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  2. Enhanced Damping-like Torque Through Strain Modulation In Ruo2.

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Enhanced Damping-Like Torque through Strain Modulation in RuO2.

Jun Qiao1,2,3, Yuhao Jiang1,2,3, Bin Hong4

  • 1Fert Beijing Institute, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China.

Nano Letters
|April 21, 2026

View abstract on PubMed

Summary
This summary is machine-generated.

Lattice strain significantly enhances spin transport in Ruthenium Dioxide (RuO2), boosting spin Hall conductivity by 200%. This discovery offers a new pathway for optimizing altermagnetic spintronic devices.

Keywords:
X-ray absorption spectroscopyaltermagnetlattice strainspin transport

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Spintronics

Background:

  • Ruthenium Dioxide (RuO2) exhibits strong spin splitting, making it promising for spin-orbit torque (SOT) applications.
  • The influence of lattice strain on spin transport in RuO2 is not well understood.

Purpose of the Study:

  • To investigate the relationship between lattice strain, orbital hybridization, and spin Hall conductivity in RuO2.
  • To elucidate the mechanism by which strain engineering affects spin transport properties.

Main Methods:

  • Fabrication of RuO2 (100)/Py heterostructures.
  • Strain engineering techniques were employed.
  • Multiscale characterization, including harmonic Hall measurements and oxygen K-edge X-ray absorption spectroscopy.

Main Results:

  • Strain relaxation in RuO2 led to a measurable shift in the Ru t2g peak, indicating altered orbital density of states.
  • Spin Hall conductivity of RuO2 increased by approximately 200% upon strain relaxation, reaching 3.09 × 10^4 (Ω·m)^-1.
  • Experimental results showed good agreement with theoretical calculations.

Conclusions:

  • Lattice strain is a critical parameter for tuning spin transport in altermagnetic RuO2.
  • Strain engineering provides a viable strategy for optimizing RuO2-based spintronic devices.