Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Experiment Videos

Inward diffusion of oxygen on a silicon surface

Hoshino1, Nishioka

  • 1Faculty of Pharmaceutical Sciences, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan.

Physical Review Letters
|September 16, 2000
PubMed
Summary
This summary is machine-generated.

Related Concept Videos

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Cooling System Permits Effective Transcutaneous Ultrasound Clot Lysis In Vivo Without Skin Damage.

Journal of thrombosis and thrombolysis·2001
Same author

Histopathologic comparison of anti-mitochondrial antibody-positive primary biliary cirrhosis and autoimmune cholangiopathy.

Hepatology research : the official journal of the Japan Society of Hepatology·2001
Same author

Preoperative Diagnosis of Breast Diseases by Dynamic MR Mammography:Cut-off Point Establishment for Signal Intensity Ratio.

Breast cancer (Tokyo, Japan)·2000
Same author

Finding Precursor Compounds in Secondary Metabolism.

Genome informatics. Workshop on Genome Informatics·2000
Same author

A capillary electrophoretic reactor with an electroosmosis control method for measurement of dissociation kinetics of metal complexes

Analytical chemistry·2000
Same author

Dimethyl azo(bisisobutyrate) and C(60) produce 1,4- and 1, 16-Di(2-carbomethoxy-2-propyl)-1,x-dihydro

The Journal of organic chemistry·2000
Same journal

Erratum: Bacterial Turbulence at Compressible Fluid Interfaces [Phys. Rev. Lett. 136, 138301 (2026)].

Physical review letters·2026
Same journal

Unveiling Light-Quark Yukawa Flavor Structure via Dihadron Fragmentation at Lepton Colliders.

Physical review letters·2026
Same journal

Adaptable Route to Fast Coherent State Transport via Bang-Bang-Bang Protocols.

Physical review letters·2026
Same journal

Topological Transition and Emergence of Elasticity of Dislocation in Skyrmion Lattice: Beyond Kittel's Magnetic-Polar Analogy.

Physical review letters·2026
Same journal

Pound-Drever-Hall Method for Superconducting-Qubit Readout.

Physical review letters·2026
Same journal

Coupling a ^{73}Ge Nuclear Spin to an Electrostatically Defined Quantum Dot in Silicon.

Physical review letters·2026
See all related articles

Density functional theory computations reveal that oxygen diffusion into silicon substrates is facilitated by surface dangling bonds. This process has a low activation energy, suggesting efficient oxygen incorporation into silicon.

Area of Science:

  • Surface Science
  • Computational Materials Science
  • Solid-State Chemistry

Background:

  • Understanding oxygen diffusion on silicon surfaces is crucial for semiconductor manufacturing.
  • Previous studies have explored oxygen interactions with silicon, but detailed mechanisms remain under investigation.

Purpose of the Study:

  • To elucidate the diffusion mechanism of oxygen atoms adsorbed on a silicon surface.
  • To quantify the activation energy for inward oxygen diffusion into the silicon substrate.

Main Methods:

  • Density functional theory (DFT) cluster computations were employed.
  • Calculations focused on modeling oxygen atom adsorption and diffusion on a silicon surface.

Main Results:

Related Experiment Videos

  • The activation energy for oxygen diffusion into the silicon substrate was calculated to be 1.6 eV.
  • A significant reduction in activation energy was observed due to the presence of surface dangling bonds.
  • An intermediate species facilitating Si-O bond rearrangement was identified.
  • Enhanced inward diffusion was noted with the adsorption of a second oxygen atom.

    • Conclusions:

    • Surface dangling bonds play a critical role in lowering the activation energy for oxygen diffusion into silicon.
    • The findings provide insights into the initial stages of silicon oxidation and oxygen incorporation.
    • Further adsorption of oxygen can accelerate the diffusion process.