1Institut d'Electronique et de Microelectronique du Nord, IEMN, (CNRS, UMR 8520), Departement ISEN, 41 boulevard Vauban, 59046 Lille Cedex, France.
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We observed standing wave patterns in InAs quantum boxes within GaAs using scanning tunneling microscopy. These patterns reveal the electronic structure of ground and excited states, influenced by strain relaxation.
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