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Updated: Jul 31, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Mechanism of THz emission from asymmetric double quantum wells
P G Huggard1, C J Shaw, S R Andrews
1Department of Physics, University of Bath, Bath BA2 7AY, United Kingdom.
Abstract:
Impulsive interband optical excitation of the lowest two conduction subbands of a suitably engineered GaAs/AlGaAs double quantum well can lead to coherent THz emission. We demonstrate that, contrary to previous expectations, the dominant emission mechanism can involve the beating of either continuum or exciton states, depending on excitation conditions. The coherence of the continuum beats persists for several picoseconds even for excitation an optical phonon energy above the band edge. We attribute this to the small energy difference between the component eigenstates, which substantially reduces the number of relevant scattering events.
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