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Optically injected spin currents in semiconductors.

R D Bhat1, J E Sipe

  • 1Department of Physics, University of Toronto, 60 St. George Street, Toronto, Ontario, Canada M5S 1A7.

Physical Review Letters
|January 3, 2001
PubMed
Summary
This summary is machine-generated.

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Researchers demonstrate optical injection of ballistic spin currents in semiconductors using quantum interference. This method allows control over spin currents via laser phase, independent of electrical currents.

Area of Science:

  • Quantum optics
  • Condensed matter physics
  • Spintronics

Background:

  • Quantum interference phenomena
  • Spin current generation in semiconductors
  • Optically induced electronic effects

Purpose of the Study:

  • To demonstrate optical injection of ballistic spin currents in unbiased semiconductors.
  • To explore the role of quantum interference in spin current generation.
  • To investigate the control of spin currents using two-color laser fields.

Main Methods:

  • Utilizing quantum interference of one and two-photon absorption.
  • Employing a two-color laser field.
  • Characterizing spin currents with symmetry arguments and an eight-band Kane model.

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Main Results:

  • Successfully injected ballistic spin currents optically in unbiased semiconductors.
  • Demonstrated that spin currents can be generated with or without electrical currents.
  • Showed that the relative phase of the two colors controls the spin currents.

Conclusions:

  • Quantum interference provides a novel pathway for optical spin current injection.
  • The developed method offers precise control over spin currents.
  • This technique has potential applications in spintronics and semiconductor device physics.