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Kinetically assisted potential sputtering of insulators by highly charged ions
G Hayderer1, S Cernusca, M Schmid
1Institut für Allgemeine Physik, TU Wien, Wiedner Hauptstrasse 8-10, A-1040 Vienna, Austria.
Physical Review Letters
|May 1, 2001
Summary
A novel kinetically assisted potential sputtering mechanism was discovered for slow, multiply charged Xenon ions impacting insulating surfaces like MgO(x). This process requires both electronic excitation and collision cascades for sputtering to occur.
Area of Science:
- Materials Science
- Surface Science
- Plasma Physics
Background:
- Potential sputtering is a known phenomenon for insulating materials.
- Multiply charged ions can induce surface modifications through various mechanisms.
Purpose of the Study:
- To investigate a new sputtering mechanism induced by slow, multiply charged Xenon ions on MgO(x).
- To elucidate the conditions necessary for this novel sputtering process.
Main Methods:
- Impact of slow (<= 1500 eV) multiply charged Xenon ions (charge states up to q=25) on MgO(x) surfaces.
- Analysis of sputtering yield and surface modifications.
Main Results:
- Discovery of a new potential sputtering mechanism.
- This mechanism requires simultaneous electronic excitation and kinetic collision cascades.
- Identified for other insulating surfaces beyond MgO(x).
Conclusions:
- A new kinetically assisted potential sputtering mechanism has been identified.
- This mechanism is distinct from those observed in alkali-halides or SiO2.
- The findings have implications for understanding ion-surface interactions with insulators.