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Spark-source mass spectrometric assessment of silicon concentrations in silicon-doped gallium arsenide single
B Wiedemann1, J D Meyer, D Jockel
1Johann Wolfgang Goethe-Universität, Institut für Kernphysik, Frankfurt, Germany. wiedemann@ikf.uni-frankfurt.de
Fresenius' Journal of Analytical Chemistry
|August 11, 2001
Abstract:
The spark-source mass spectrometric assessment of silicon concentrations in silicon-doped vertical-gradient-freeze gallium arsenide is presented. The silicon concentrations determined are compared with the charge-carrier densities measured by means of the Hall effect with van der Pauw symmetry along the axis of a single crystal.