Related Experiment Videos
Atomic surrounding of Co implanted in AIN at high energy
A Traverse1, A Delobbe, D Zanghi
1Laboratoire pour l'Utilisation du Rayonneent Electromagnétique, Université Paris-Sud, Orsay, France.
Journal of Synchrotron Radiation
|August 22, 2001
Abstract:
AlN bulk ceramic has been implanted with energetic Co ions. In order to accurately characterise the atomic surrounding of the implanted ions. X-ray absorption measurements were carried out at 80 K in the fluorescence mode at the Co K edge in the as-implanted and annealed states. Simulation of the EXAFS oscillations allowed us to identify a first stage where Co is inserted in the AlN matrix followed by a second stage where Co precipitates form.