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Recrystallization by annealing in SiC amorphized with Ne irradiation
Jun Aihara1, Kiichi Hojou, Shigemi Furuno
1Japan Atomic Energy Research Institute, Higashi-ibaraki-gun, Ibaraki-ken. aihara@sspl.tokai.jaeri.go.jp
Journal of Electron Microscopy
|May 15, 2002
Summary
Neon ion irradiation amorphizes alpha-silicon carbide. Subsequent annealing promotes epitaxial regrowth, with crystal nucleation and bubble formation dependent on ion fluence and annealing temperature.
Area of Science:
- Materials Science
- Ion Beam Modification
- Semiconductor Physics
Background:
- Alpha-silicon carbide (α-SiC) is a crucial semiconductor material for high-power and high-frequency applications.
- Understanding the effects of ion irradiation and annealing on SiC is vital for its use in harsh environments.
- Previous studies have explored radiation damage in SiC, but specific details on Ne+ ion effects and subsequent regrowth require further investigation.
Purpose of the Study:
- To investigate the structural evolution of alpha-silicon carbide (α-SiC) after Ne+ ion irradiation.
- To determine the influence of ion fluence and isochronal annealing on amorphization, epitaxial regrowth, and defect formation in α-SiC.
- To establish the critical annealing temperatures for crystal nucleation and bubble formation.
Main Methods:
- Irradiation of α-SiC thin films with Ne+ ions at room temperature to varying fluences (up to 7.5 x 10^20 Ne+ m^-2).
- Isochronal annealing of irradiated samples.
- In-situ observation of structural changes using transmission electron microscopy (TEM).
Main Results:
- Complete amorphization of thin α-SiC regions was observed at all irradiation fluences.
- Epitaxial regrowth initiated from residual crystalline regions during annealing.
- Crystal nucleation occurred at 1000°C for higher fluences (3.8 and 7.5 x 10^20 Ne+ m^-2) and 1100°C for lower fluences (1.3 and 2.3 x 10^20 Ne+ m^-2).
- Bubble formation or growth was observed at 1000°C for fluences of 1.3, 2.3, and 3.8 x 10^20 Ne+ m^-2.
Conclusions:
- Neon ion irradiation induces amorphization in α-SiC, with the extent dependent on ion fluence.
- Isochronal annealing facilitates the recovery of crystalline structure through epitaxial regrowth.
- The temperature required for crystal nucleation and the propensity for bubble formation are strongly correlated with the initial ion fluence, highlighting the complex interplay between irradiation damage and thermal treatment in SiC.