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Related Experiment Videos

Two-dimensional simulation and modeling in scanning electron microscope imaging and metrology research.

Michael T Postek1, András E Vladár, Jeremiah R Lowney

  • 1Precision Engineering Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA. postek@nist.gov

Scanning
|August 9, 2002
PubMed
Summary

This study introduces a new method for generating 2-D simulated scanning electron microscope (SEM) images from Monte Carlo modeling. This technique aids in matching theoretical and experimental SEM images for metrology applications.

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Area of Science:

  • Materials Science
  • Metrology
  • Computational Physics

Background:

  • Traditional Monte Carlo modeling in Scanning Electron Microscopy (SEM) provides 1D information via line scans.
  • Forward line scan modeling is useful for characterizing sample dimensions like linewidth.
  • Direct comparison between theoretical and experimental SEM images is challenging.

Purpose of the Study:

  • To introduce a method for generating 2-D simulated SEM images from forward-modeled line scan data.
  • To enable direct comparison between theoretical and experimental SEM images.
  • To facilitate the development of libraries of simulated images for metrology.

Main Methods:

  • Utilizing Monte Carlo modeling to simulate electron beam-specimen interactions.
  • Extending 1D forward line scan modeling results to construct 2D theoretical micrographs.

Related Experiment Videos

  • Comparing simulated 2D micrographs with experimental SEM images.
  • Main Results:

    • Successfully generated theoretical 2D SEM images (micrographs).
    • Demonstrated the ability to mimic and closely match experimental SEM images with simulations.
    • Established a foundation for creating libraries of simulated images.

    Conclusions:

    • The developed technique allows for the creation of 2D simulated SEM images.
    • This approach facilitates matching theory with experimental SEM data.
    • The method is valuable for critical dimension metrology, particularly for integrated circuit parts.