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IR detection of NO2 using p+ porous silicon as a high sensitivity sensor
F Geobaldo1, B Onida, P Rivolo
1Dipartimento di Scienza dei Materiali e Ingegneria Chimica, Politecnico di Torino, Corso Duca degli Abruzzi 24 10129, Torino, Italy.
Chemical Communications (Cambridge, England)
|September 21, 2002
Abstract:
Mesoporous silicon doped with 3.0 x 10(19) B atoms cm-3 (p(+)-type) is an insulating material which dramatically increases its electrical conductivity when exposed to traces of gaseous NO2; nitrogen dioxide chemisorption at the surface generates carriers, the population of which is readily evaluated through the intensity of IR absorption.