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Spin-orbit coupling, antilocalization, and parallel magnetic fields in quantum dots.

D M Zumbühl1, J B Miller, C M Marcus

  • 1Department of Physics, Harvard University, Cambridge, MA 02138, USA.

Physical Review Letters
|January 7, 2003
PubMed
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Spin-orbit coupling in gallium arsenide (GaAs) quantum dots shows size-dependent antilocalization. Researchers controlled this effect using gate voltages, demonstrating a tunable crossover between weak localization and antilocalization.

Area of Science:

  • Condensed Matter Physics
  • Quantum Mechanics
  • Semiconductor Nanostructures

Background:

  • Spin-orbit coupling (SOC) significantly influences electron transport in low-dimensional systems.
  • Quantum dots offer a tunable platform to study fundamental quantum phenomena.
  • Antilocalization and weak localization are key signatures of quantum interference effects in disordered conductors.

Purpose of the Study:

  • To investigate the phenomenon of antilocalization in ballistic gallium arsenide (GaAs) quantum dots.
  • To explore the influence of dot size and parallel magnetic fields on antilocalization.
  • To demonstrate in situ control over spin-orbit coupling and its effect on electron transport regimes.

Main Methods:

  • Fabrication and characterization of ballistic GaAs quantum dots of varying sizes.

Related Experiment Videos

  • Transport measurements under varying parallel magnetic fields.
  • Analysis of magnetotransport data to identify weak localization and antilocalization regimes.

    • Main Results:

    • Antilocalization was observed and found to be prominent in larger quantum dots, while suppressed in smaller ones.
    • Parallel magnetic fields suppressed antilocalization and, at higher fields, weak localization, aligning with theoretical predictions including orbital coupling.
    • A gate-controlled transition from weak localization to antilocalization was successfully demonstrated, indicating tunable SOC.

    Conclusions:

    • The study confirms the theoretical predictions regarding the size dependence of antilocalization in quantum dots.
    • Parallel magnetic fields provide a means to probe and suppress quantum interference effects, consistent with random matrix theory.
    • Gate-controlled SOC offers a promising pathway for manipulating electron transport in quantum dot devices.