Virtual optical experiments. Part I. Modeling the measurement process

Area of Science:

• Semiconductor Physics
• Optical Measurement Techniques
• Computational Modeling

Background:

• Internal laser probing utilizes electro-optical and thermo-optical effects for semiconductor analysis.
• These techniques enable space- and time-resolved measurements of internal charge-carrier and temperature distributions.

Purpose of the Study:

• To develop a physically rigorous model for simulating the entire internal laser probing measurement process.
• To enable profound analysis and optimization of these advanced semiconductor characterization techniques.

Main Methods:

• Electrothermal device simulation of semiconductor operating conditions.
• Calculation of refractive-index modulations induced by operating conditions.
• Simulation of optical wave propagation through the device, optics, and detector response.
• Development of a numerically efficient algorithm for wave propagation in large domains using specialized computational variables.

Main Results:

• A comprehensive simulation model integrating device operation, optical effects, and detector response has been established.
• A novel, efficient algorithm significantly reduces computational cost for wave propagation simulations.
• The model allows for accurate simulation with coarser discretization, enhancing practical application.

Conclusions:

• The presented model provides a powerful tool for analyzing and optimizing internal laser probing techniques.
• The developed simulation approach facilitates deeper understanding and improved performance of semiconductor characterization methods.