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Related Experiment Videos

Fluorine in silicon: diffusion, trapping, and precipitation.

X D Pi1, C P Burrows, P G Coleman

  • 1Department of Physics, University of Bath, Bath BA2 7AY, United Kingdom.

Physical Review Letters
|May 7, 2003
PubMed
Summary

Fluorine (F) in silicon (Si) retards recombination of vacancies (V) and interstitials (I) by forming complexes. This study elucidates F diffusion via vacancies and observes F precipitation after annealing.

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Area of Science:

  • Materials Science
  • Solid-State Physics
  • Semiconductor Science

Background:

  • Understanding point defect behavior is crucial for semiconductor device performance.
  • The role of impurities like Fluorine (F) in defect dynamics in crystalline silicon (Si) is not fully understood.
  • Vacancies (V) and interstitials (I) are key point defects influencing Si properties.

Purpose of the Study:

  • To experimentally elucidate the effect of Fluorine (F) on vacancy behavior in crystalline silicon (Si).
  • To investigate the interaction between F and point defects (V and I).
  • To determine the diffusion mechanism and activation energy of F in a vacancy-rich environment.

Main Methods:

  • Positron annihilation spectroscopy (PAS) to study vacancies.

Related Experiment Videos

  • Secondary ion mass spectroscopy (SIMS) for elemental analysis.
  • Cross-section transmission electron microscopy (X-TEM) for microstructural observation.
  • Main Results:

    • Fluorine (F) significantly retards the recombination of vacancies (V) and interstitials (I).
    • Complex formation between F and V/I defects was identified as the retarding mechanism.
    • F diffuses via a vacancy mechanism with an activation energy of 2.12 ± 0.08 eV.
    • F precipitates were observed after prolonged annealing at 700°C, originating from V-type and I-type defects.

    Conclusions:

    • Fluorine acts as a trapping agent for vacancies and interstitials, altering defect recombination kinetics in silicon.
    • The diffusion of F in silicon is governed by a vacancy mechanism.
    • Annealing leads to the formation of Fluorine precipitates from initial defect clusters.