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Updated: Jul 24, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
High-finesse optical quantum gates for electron spins in artificial molecules
Filippo Troiani1, Elisa Molinari, Ulrich Hohenester
1INFM-S3 and Dipartimento di Fisica, Università di Modena e Reggio Emilia, Via Campi 213/A, 41100 Modena, Italy. troiani@unimore.it
Abstract:
A doped semiconductor double-quantum-dot molecule is proposed as a qubit realization. The quantum information is encoded in the electron spin, thus benefiting from the long relevant decoherence times; the enhanced flexibility of the molecular structure allows one to map the spin degrees of freedom onto the orbital ones and vice versa and opens the possibility for high-finesse (conditional and unconditional) quantum gates by means of stimulated Raman adiabatic passages.
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