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Ultralow-threshold microcavity Raman laser on a microelectronic chip.
T J Kippenberg1, S M Spillane, D K Armani
1California Institute of Technology, Department of Applied Physics, Pasadena, California 91125, USA.
Optics Letters
|June 24, 2004
Summary
We developed a microcavity Raman laser on a chip using ultrahigh-Q toroid microcavities. This device achieves ultralow threshold stimulated Raman scattering, paving the way for integrated photonic circuits.
Area of Science:
- Photonics
- Microcavity devices
- Laser technology
Background:
- Stimulated Raman scattering (SRS) is crucial for nonlinear optics and photonics.
- Achieving low thresholds for SRS typically requires high optical confinement and efficient light coupling.
- Previous microcavity lasers faced challenges with threshold power and integration.
Purpose of the Study:
- To demonstrate a monolithic microcavity Raman laser with an ultralow threshold.
- To leverage ultrahigh-Q toroid microcavities for enhanced stimulated Raman scattering.
- To explore the potential for on-chip integration of Raman laser functionality.
Main Methods:
- Fabrication of ultrahigh-Q toroid microcavities on a chip.
- Coupling optical power using a tapered optical fiber.
- Characterization of stimulated Raman scattering threshold and efficiency.
Main Results:
- Demonstrated a monolithic microcavity Raman laser.
- Achieved stimulated Raman lasing at an ultralow threshold of 74 microwatts.
- Observed high conversion efficiency up to 45% at the critical coupling point.
- Cavity photon lifetimes exceeded 100 ns with sub-1000 cubic micrometer mode volumes.
Conclusions:
- Ultrahigh-Q microcavities significantly lower the threshold for stimulated Raman scattering.
- The demonstrated device offers high efficiency and low threshold, aligning with theoretical predictions.
- The wafer-scale fabrication enables integration with other chip-based functionalities for advanced photonic circuits.