Deep X-ray lithography with a tunable wavelength shifter at CAMD

An additional X-ray lithography facility is under construction at the Center for Advanced Microstructures and Devices. It will receive radiation from a 7.5 T superconducting three-pole wavelength shifter. The critical energy of the insertion device is tunable up to a maximum value of 11.2 keV, allowing for optimization of photon spectra to resist thickness. In particular, this hard X-ray source will allow investigation of X-ray lithography at very high energies for devices with thicknesses in excess of 1 mm, and study of low-cost mass-production concepts, using simultaneously exposed stacks of resist layers.