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Tip-enhanced fluorescence microscopy at 10 nanometer resolution.

Jordan M Gerton1, Lawrence A Wade, Guillaume A Lessard

  • 1Department of Applied Physics, California Institute of Technology, MC 128-95, Pasadena, CA 91125, USA.

Physical Review Letters
|November 5, 2004
PubMed
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We found that laser-illuminated silicon tip sharpness dictates field enhancement decay. This method enables high-resolution imaging of semiconductor nanocrystals with excellent background rejection.

Area of Science:

  • Nanophotonics
  • Materials Science
  • Scanning Probe Microscopy

Background:

  • Field enhancement near sharp tips is crucial for nanoscale optical measurements.
  • Understanding the relationship between tip geometry and field enhancement is essential for improving resolution.

Purpose of the Study:

  • To quantitatively describe the field enhancement decay near a laser-illuminated silicon tip.
  • To develop a high-resolution imaging technique for semiconductor nanocrystals.

Main Methods:

  • Utilizing a laser-illuminated silicon tip probe.
  • Employing intermittent contact mode with semiconductor nanocrystals.
  • Implementing laterally encoded demodulation for image analysis.

Main Results:

Related Experiment Videos

  • Field enhancement follows a power law moderated by tip sharpness.
  • Fluorescence excitation rate modulation provides robust optical contrast.
  • Achieved spatial resolution below 10 nm.

Conclusions:

  • Tip sharpness is a key parameter for controlling field enhancement.
  • The developed technique offers high sensitivity and background rejection for nanoscale imaging.
  • The results are consistent with independent measurements of tip sharpness.