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Updated: Jul 13, 2026

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology
Published on: December 7, 2015
Fluorination and electrical conductivity of BN nanotubes
Chengchun Tang1, Yoshio Bando, Yang Huang
1Advanced Materials Laboratory, National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan. tang.chengchun@nims.go.jp
Abstract:
Fluorination of BN nanotubes has been performed using a catalytic growth method, which leads to the appearance of markedly curved fluorine-doped BN sheets and converts originally insulating BN nanotubes to semiconductors, as confirmed by the comparative electron transport four-probe measurements on doped and undoped individual BN nanotubes.
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