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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
15:47

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

Coherent population trapping of electron spins in a high-purity n-type GaAs semiconductor

Kai-Mei C Fu1, Charles Santori, Colin Stanley

  • 1Quantum Entanglement Project, ICORP, JST, Edward L. Ginzton Laboratory, Stanford University, California 94305-4085, USA. kaimeifu@stanford.edu

Physical Review Letters
|December 31, 2005
PubMed

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