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Stoichiometry driven impurity configurations in compound semiconductors.

G Chen1, I Miotkowski, S Rodriguez

  • 1Department of Physics, Purdue University, West Lafayette, Indiana 47907, USA.

Physical Review Letters
|February 21, 2006
PubMed
Summary
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Oxygen impurities in cadmium telluride (CdTe) semiconductors can occupy multiple configurations. Low-temperature infrared spectroscopy revealed a unique doublet for oxygen paired with a cadmium vacancy, transforming into a single line at higher temperatures.

Area of Science:

  • Solid State Physics
  • Materials Science
  • Semiconductor Physics

Background:

  • Stoichiometry in compound semiconductors influences impurity incorporation.
  • Tetrahedrally coordinated semiconductors like CdTe exhibit complex defect structures.

Purpose of the Study:

  • To investigate the local vibrational modes of oxygen impurities in CdTe.
  • To characterize the configurations and temperature-dependent behavior of oxygen-vacancy complexes in CdTe.

Main Methods:

  • Ultrahigh resolution infrared spectroscopy at low temperatures.
  • Analysis of local vibrational modes (LVMs) of impurities.

Main Results:

  • A sharp doublet was observed, attributed to OTe in an (OTe-VCd) complex with a nearest-neighbor Cd vacancy (VCd).

Related Experiment Videos

  • A single sharp line, corresponding to OTe in perfect CdTe, was also identified.
  • The (OTe-VCd) complex exhibited uniaxial (C3v) symmetry, transitioning to tetrahedral (Td) symmetry at approximately 300 K due to dynamic switching.

    • Conclusions:

    • The observed spectral changes indicate dynamic switching of the oxygen-vacancy complex at elevated temperatures.
    • This dynamic behavior leads to the transformation of the split doublet into a single, triply degenerate line above a critical temperature (T*).
    • Understanding these defect configurations is crucial for controlling impurity behavior in CdTe semiconductors.