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Electrically pumped two-dimensional Bragg grating lasers.

Lin Zhu1, John M Choi, Guy A DeRose

  • 1Department of Electrical Engineering, California Institute of Technology, 1200 East California Boulevard, Pasdena, 91125, USA. linz@caltech.edi

Optics Letters
|May 27, 2006
PubMed
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We developed new semiconductor lasers using two-dimensional Bragg gratings (2DBG) and line defects. These lasers offer improved control over light emission, paving the way for efficient, large-area laser applications.

Area of Science:

  • Optoelectronics
  • Semiconductor Lasers
  • Photonics

Background:

  • Controlling optical modes in semiconductor lasers is crucial for advanced applications.
  • Large-area lasers often suffer from poor beam quality and low efficiency.
  • Two-dimensional photonic structures offer novel ways to manage light propagation.

Purpose of the Study:

  • To demonstrate electrically pumped InGaAsP two-dimensional Bragg grating (2DBG) lasers.
  • To investigate the role of line defects in modal control within 2DBG structures.
  • To assess the potential of 2DBG lasers for high-power, single-mode operation.

Main Methods:

  • Fabrication of InGaAsP semiconductor lasers incorporating 2D Bragg gratings.
  • Integration of two line defects within the 2DBG structure.

Related Experiment Videos

  • Optical characterization of laser performance, including modal analysis in longitudinal and transverse directions.

    • Main Results:

    • Successful demonstration of electrically pumped 2DBG lasers with integrated line defects.
    • Evidence of effective modal control in both longitudinal and transverse directions attributed to gratings and defects.
    • Observation of promising characteristics for single-mode, high-power, and high-efficiency operation.

    Conclusions:

    • 2DBG lasers with line defects enable precise control over optical modes.
    • These lasers show significant potential for developing advanced, large-area semiconductor laser sources.
    • The demonstrated technology is a key step towards next-generation optoelectronic devices.