A novel matching network employing surface acoustic wave devices for W-CDMA power amplifiers

This paper describes a new approach of designing high Q surface acoustic wave (SAW) resonators as an inductive element in the matching network for W-CDMA power amplifiers (PAs). Spiral inductors based on CMOS/BiCMOS technologies presently possess relatively low Q (typically <10) and occupy a considerably large area. In order to break through the limitations of the spiral inductors, the authors attempt to apply higher Q and wideband SAW resonators employing Cu-grating/15 degrees YX-LiNbO(3)-substrate structure to the matching network for improved PA performance. An analysis was made on SAW resonators in detail, and an SAW resonator having a very small capacitance ratio of 3.28 and moderate Q of 147.8 was developed. After discussing the frequency dependence of the effective inductances, SAW resonators, which are used to be as inductive elements in the matching networks of PAs, were designed and fabricated. The PA including the matching circuit was simulated using the characteristics of the fabricated SAW resonators. The result showed that with better shape factor and good out-of-rejection, the SAW resonators definitely work as an inductive element and could replace widely used spiral inductors.