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Updated: Aug 7, 2026
10:12
Synchrotron X-ray Microdiffraction and Fluorescence Imaging of Mineral and Rock Samples
Published on: June 19, 2018
[Study of enhancement effects in X-ray fluorescence analysis for multi-layer samples]
Xiao-Yuan Han1, Shang-Jun Zhuo, Pei-Ling Wang
1Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China.
Guang Pu Xue Yu Guang Pu Fen Xi = Guang Pu
|July 11, 2006
Summary
X-ray fluorescence analysis reveals significant enhancement effects in multi-layer samples. Film thickness and position critically influence X-ray fluorescence intensity, impacting elemental analysis accuracy.
Area of Science:
- Materials Science
- Analytical Chemistry
- Physics
Context:
- X-ray fluorescence (XRF) analysis is a powerful technique for elemental composition determination.
- Multi-layer thin films are crucial in various technological applications, including microelectronics and coatings.
- Understanding XRF behavior in multi-layer systems is essential for accurate material characterization.
Purpose:
- To investigate and quantify the enhancement effects in X-ray fluorescence (XRF) analysis of multi-layer samples.
- To develop a computational model for calculating XRF intensities, including primary and secondary fluorescence.
- To analyze the influence of film thickness and layer arrangement on XRF signals.
Summary:
- A computer program was developed using theoretical equations to calculate XRF intensities for Zn/Fe and Fe/Zn film samples.
- Results show that primary and secondary fluorescence intensities, their ratios, and contributions to total fluorescence are dependent on film thickness and position.
- Significant variations in secondary fluorescence contribution were observed, reaching up to 35% for Zn/Fe samples compared to 9% for Fe/Zn samples when film thicknesses were equal.
Impact:
- Provides crucial insights into the complexities of XRF analysis for multi-layer thin films.
- Highlights the importance of considering layer order and thickness for accurate quantitative analysis.
- Enables improved accuracy and reliability in material characterization using XRF, particularly for thin-film applications.
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