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Nd:GdVO4 as a three-level laser at 879 nm
E Herault1, F Balembois, P Georges
1Laboratoire Charles Fabry de l'Institut d'Optique, Centre Scientifique d'Orsay, Orsay, France.
Optics Letters
|August 29, 2006
Summary
This study demonstrates the first diode-pumped three-level laser using a Nd-doped crystal, achieving 0.8 W continuous wave power and 24 microJ pulsed energy at 879 nm. Second-harmonic generation produced 178 mW average power at 439.5 nm.
Area of Science:
- Laser physics
- Solid-state lasers
- Quantum optics
Background:
- Three-level lasers are fundamental in laser physics.
- Neodymium (Nd)-doped crystals are widely used gain media.
- Diode pumping offers efficient excitation for solid-state lasers.
Purpose of the Study:
- To demonstrate the first true three-level laser utilizing a Neodymium (Nd)-doped crystal.
- To investigate laser emission at 879 nm from the 4F3/24I9/2 transition in NdGdVO4.
- To explore the potential for second-harmonic generation in this novel laser system.
Main Methods:
- Diode pumping of a NdGdVO4 crystal.
- Operation in continuous wave (cw) and Q-switched regimes.
- Intracavity second-harmonic generation (SHG).
Main Results:
- Achieved 879 nm laser emission from the 4F3/24I9/2 transition with the lower laser level as the ground state.
- Obtained up to 0.8 W of cw output power.
- Generated 24 microJ per pulse (35 ns pulse duration) in the Q-switched regime.
- Demonstrated intracavity SHG with 178 mW average output power at 439.5 nm (17 microJ per pulse).
Conclusions:
- Successfully realized the first true three-level laser based on a Nd-doped crystal.
- The NdGdVO4 crystal is a viable gain medium for diode-pumped three-level lasers.
- The system shows potential for efficient frequency conversion through intracavity SHG.
