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Updated: Jul 20, 2026

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
10:31

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Published on: November 24, 2016

Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors

Shigefusa F Chichibu1, Akira Uedono, Takeyoshi Onuma

  • 1Institute of Applied Physics and 21st Century COE Office, Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan. chichibu@alumni.engr.ucsb.edu

Nature Materials
|September 5, 2006
PubMed

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