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Related Concept Videos

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Biasing of P-N Junction01:16

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Zener Diodes01:16

Zener Diodes

Zener diodes are specialized semiconductor devices designed to operate in the reverse breakdown region, where they allow current to flow into the cathode, making it positive relative to the anode. This reverse operation distinguishes Zener diodes from conventional diodes and enables their use in various applications, most notably as voltage regulators. One of the defining characteristics of Zener diodes is their nearly vertical I-V (current-voltage) characteristic curve above a certain...
P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
Crystal Field Theory - Tetrahedral and Square Planar Complexes02:46

Crystal Field Theory - Tetrahedral and Square Planar Complexes

Tetrahedral Complexes
Crystal field theory (CFT) is applicable to molecules in geometries other than octahedral. In octahedral complexes, the lobes of the dx2−y2 and dz2 orbitals point directly at the ligands. For tetrahedral complexes, the d orbitals remain in place, but with only four ligands located between the axes. None of the orbitals points directly at the tetrahedral ligands. However, the dx2−y2 and dz2 orbitals (along the Cartesian axes) overlap with the ligands less than the dxy,...

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Related Experiment Video

Updated: Jul 20, 2026

Spark Plasma Sintering Apparatus Used for the Formation of Strontium Titanate Bicrystals
11:17

Spark Plasma Sintering Apparatus Used for the Formation of Strontium Titanate Bicrystals

Published on: February 9, 2017

Specific twin junctions in doped zirconia.

F M Morales1, M Rühle

  • 1Max Planck Institute for Metal Research, Heisenbergstrasse 3, D-70569 Stuttgart, Germany. fmiguel.morales@uca.es

Acta Crystallographica. Section B, Structural Science
|September 20, 2006
PubMed
Summary

This study investigates how dopant cations affect zirconia phase transformations. Selected-area electron diffraction reveals twin junction characteristics in doped monoclinic zirconia solid solutions.

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Multi-material Ceramic-Based Components – Additive Manufacturing of Black-and-white Zirconia Components by Thermoplastic 3D-Printing (CerAM - T3DP)
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Co-localizing Kelvin Probe Force Microscopy with Other Microscopies and Spectroscopies: Selected Applications in Corrosion Characterization of Alloys
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Co-localizing Kelvin Probe Force Microscopy with Other Microscopies and Spectroscopies: Selected Applications in Corrosion Characterization of Alloys

Published on: June 27, 2022

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Last Updated: Jul 20, 2026

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Spark Plasma Sintering Apparatus Used for the Formation of Strontium Titanate Bicrystals

Published on: February 9, 2017

Multi-material Ceramic-Based Components – Additive Manufacturing of Black-and-white Zirconia Components by Thermoplastic 3D-Printing (CerAM - T3DP)
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Co-localizing Kelvin Probe Force Microscopy with Other Microscopies and Spectroscopies: Selected Applications in Corrosion Characterization of Alloys
12:18

Co-localizing Kelvin Probe Force Microscopy with Other Microscopies and Spectroscopies: Selected Applications in Corrosion Characterization of Alloys

Published on: June 27, 2022

Area of Science:

  • Materials Science
  • Crystallography
  • Solid-state Chemistry

Background:

  • Zirconia (ZrO2) exhibits various phases, with the tetragonal phase often stabilized by dopants.
  • Doped monoclinic zirconia grains develop twinned structures, but grain boundary characterization remains challenging.
  • Understanding these structures is crucial for advanced ceramic applications.

Purpose of the Study:

  • To investigate the influence of different dopant cations on the phase transformations of stabilized tetragonal zirconia.
  • To characterize the nature of grain boundaries and twin junctions in doped monoclinic zirconia.
  • To establish selected-area electron diffraction as a viable method for twin junction analysis.

Main Methods:

  • Heat treatment of doped zirconia samples.
  • Analysis of phase transformations using selected-area electron diffraction (SAED).
  • Application of the coincidence site lattice (CSL) concept for twin classification.

Main Results:

  • Different dopant cations influence the phase transformation pathways of zirconia.
  • SAED patterns provide detailed information on twin junction structures in doped monoclinic zirconia.
  • A classification scheme for special twins in doped zirconia systems based on CSL was developed.

Conclusions:

  • The study successfully characterized twin junctions in doped monoclinic zirconia using SAED.
  • The findings contribute to a better understanding of grain boundary structures in zirconia-based materials.
  • SAED offers a valuable alternative for analyzing twin characteristics in doped zirconia systems.