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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
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Selective ion-induced intermixing and damage in low-dimensional GaN/AlN quantum structures.

A Redondo-Cubero1, K Lorenz, E Wendler

  • 1Instituto Superior Técnico, Campus Tecnológico e Nuclear, Universidade de Lisboa, 2695-066 Bobadela LRS, Portugal.

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Ion implantation causes significant damage and intermixing in GaN/AlN superlattices. Quantum dots (QDs) show higher intermixing efficiency than quantum wells (QWs) due to unique diffusion mechanisms.

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Area of Science:

  • Materials Science
  • Solid State Physics
  • Nanotechnology

Background:

  • GaN/AlN superlattices are crucial for optoelectronic devices.
  • Understanding ion-induced effects is vital for device fabrication and stability.

Purpose of the Study:

  • To investigate ion-induced intermixing and damage in GaN/AlN quantum dots (QDs) and quantum wells (QWs).
  • To compare the intermixing efficiency and damage accumulation between QDs and QWs.

Main Methods:

  • 100 keV Ar(+) ion implantation at low temperature (15 K).
  • Analysis of elemental depth profiles using a diffusion model.
  • Evaluation of damage accumulation at varying ion fluences.

Main Results:

  • Similar damage accumulation at low fluences, but significantly higher for QDs at high fluences.
  • QD superlattices exhibit higher intermixing efficiency compared to QWs.
  • Diffusion length scales with local fluence and defect concentration, explained by cascade mixing and defect migration.

Conclusions:

  • Selective intermixing and damage in QDs are attributed to promoted lateral diffusion and enhanced diffusivity from strain distribution.
  • These findings provide insights into controlling ion-beam processes for nanostructure engineering.